The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Feb. 19, 2002
Katsutoshi Izumi, Sakai, JP;
Keiji Mine, Yao, JP;
Yoshiaki Ohbayashi, Nara, JP;
Fumihiko Jobe, Yao, JP;
Other;
Abstract
The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber A in which a sample formed with a carbon thin film on its surface is to be set, a gas feed means A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O has been mixed from one end to the interior of the reaction chamber A, an exhaust means A for discharging carbon dioxide gas CO from the downstream side of the inert gas Ar fed from the gas feed means A, and a heating means A for heating the sample to 550° C. or higher are provided.