Plainsboro, NJ, United States of America

Fengnian Xia



Average Co-Inventor Count = 3.3

ph-index = 11

Forward Citations = 401(Granted Patents)


Location History:

  • Princeton, NJ (US) (2004 - 2008)
  • New York, NY (US) (2010 - 2012)
  • Yorktown Heights, NY (US) (2011 - 2013)
  • Plainsboro, NJ (US) (2008 - 2019)

Company Filing History:


Years Active: 2004-2019

where 'Filed Patents' based on already Granted Patents

29 patents (USPTO):

Title: The Innovative Journey of Inventor Fengnian Xia

Introduction: Fengnian Xia, a pioneering inventor based in Plainsboro, NJ (US), has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Fengnian Xia holds several cutting-edge patents in the areas of nanotechnology, semiconductor devices, and optoelectronics, showcasing his continuous commitment to innovation and advancement in these fields.

Career Highlights: With a distinguished career spanning over two decades, Fengnian Xia has worked tirelessly to push the boundaries of technology. His work has not only revolutionized the semiconductor industry but has also paved the way for future advancements in nanotechnology.

Collaborations: Throughout his career, Fengnian Xia has collaborated with leading research institutions, universities, and tech companies to further his research and bring his inventions to life. His collaborative spirit and innovative mindset have led to groundbreaking discoveries in the field.

Conclusion: Fengnian Xia's passion for innovation and his relentless pursuit of technological advancement have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the limits of what is possible in the realm of technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…