The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Nov. 29, 2011
Applicants:

Ali Afzali-ardakani, Ossining, NY (US);

Bhupesh Chandra, Jersey City, NJ (US);

George Stojan Tulevski, White Plains, NY (US);

Fengnian Xia, Plainsboro, NJ (US);

Inventors:

Ali Afzali-Ardakani, Ossining, NY (US);

Bhupesh Chandra, Jersey City, NJ (US);

George Stojan Tulevski, White Plains, NY (US);

Fengnian Xia, Plainsboro, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.


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