International Business Machines Corporation

Princeton University

Globalfoundries Inc.

Fengnian Xia

Phaedon Avouris

Yurii A Vlasov

Chun-Yung Sung

Hugen Yan

Solomon Assefa

Alberto V Garcia

Alberto Valdes Garcia

Stephen R Forrest

Stephen W Bedell

Dirk Pfeiffer

Damon B Farmer

Vinod M Menon

Milind R Gokhale

Tony A Low

Ali Afzali-Ardakani

Hendrik F Hamann

George Stojan Tulevski

William M Green

Yu-Ming Lin

Bhupesh Chandra

Sharee Jane McNab

Gabriel Konrad Dehlinger

Thomas Mueller

Yu Huang

A system for labeling an object uses at least one object label made from a material that absorbs and reflects incident energy uniformly across all wavelengths of incident energy at a ratio proportional to a thickness of the material and that includes a pattern having variations in the thickness of the material along at least one of two orthogonal directions across the label. An interrogator directs a predetermined wavelength of radiation to the at least one label, and a reader to receives reflected radiation from the label at the predetermined wavelength and interprets the reflected radiation to recognize the pattern.

Graphene-based micro-scale identification system

The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.

Method and apparatus for optical modulation

Structures and methods for cloaking an object to electromagnetic radiation at the microwave and terahertz frequencies include disposing a plurality of graphene sheets about the object. Intermediate layers of a transparent dielectric material can be disposed between graphene sheets to optimize the performance. In other embodiments, the graphene can be formulated into a paint formulation or a fabric and applied to the object. The structures and methods absorb at least a portion of the electromagnetic radiation at the microwave and terabyte frequencies.

Graphene based structures and methods for broadband electromagnetic radiation absorption at the microwave and terahertz frequencies

Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing highly doped graphene sheets about the object to be shielded. The highly doped graphene sheets may have a dopant concentration greater than &#x3e;1e10cm, which is effective to reflect the electromagnetic radiation or a dopant concentration of 1e10cm&#x3e;n&#x3e;0 cm, which is effective to absorb the electromagnetic radiation.

Graphene based structures and methods for shielding electromagnetic radiation

Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing doped graphene sheets about the object to be shielded. The doped graphene sheets have a dopant concentration that is effective to reflect and/or absorb the electromagnetic radiation.

A set of buried electrodes are embedded in a dielectric material layer, and a graphene layer having a doping of a first conductivity type are formed thereupon. A first upper electrode is formed over a center portion of each buried electrode. Second upper electrodes are formed in regions that do not overlie the buried electrodes. A bias voltage is applied to the set of buried electrodes to form a charged region including minority charge carriers over each of the buried electrodes, and to form a p-n junction around each portion of the graphene layer overlying a buried electrode. Charge carriers generated at the p-n junctions are collected by the first upper electrodes and the second upper electrodes, and are subsequently measured by a current measurement device or a voltage measurement device.

Graphene photodetector

A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

Reducing contact resistance for field-effect transistor devices

An electromagnetic device and method for fabrication includes a substrate and a layer of graphene formed on the substrate. A metallization layer is patterned on the graphene. The metallization layer forms electrodes such that when the graphene is excited by light, terahertz frequency radiation is generated.

Generation of terahertz electromagnetic waves in graphene by coherent photon-mixing

A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices

Growing community of inventors

Plainsboro, NJ, United States of America

Fengnian Xia