The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2013

Filed:

Aug. 07, 2012
Applicants:

Phaedon Avouris, Yorktown Heights, NY (US);

Damon B. Farmer, Yorktown Heights, NY (US);

Fengnian Xia, Yorktown Heights, NY (US);

Inventors:

Phaedon Avouris, Yorktown Heights, NY (US);

Damon B. Farmer, Yorktown Heights, NY (US);

Fengnian Xia, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.


Find Patent Forward Citations

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Avouris, Phaedon. (2013). Utilization of organic buffer layer to fabricate high performance carbon nanoelectronic devices (U.S. Patent No. 8614141). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8614141

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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