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Boise, ID, United States of America

Fei Wang

USPTO Granted Patents = 41 (Patent Applications = 3)

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 139(Granted Patents)

Location History:

Boise, WA (US) (2013)
Boise, ID (US) (2008 - 2024)

Company Filing History:

38 out of 37,972

Micron Technology Incorporated

Aptina Imaging Corporation

Intel Corporatino

Years Active: 2008-2025

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Areas of Expertise:

Semiconductor Devices

Carbon-Doped Silicon Nitride

Programmable Charge Storage Transistor

Elevationally-Extending Strings

Solid State Memory Device

Photomasks

Lithographic Simulation

Optical Compensation Devices

DRAM Cell Design

Sub-Resolution Assist Devices

Phase Shift Mask

Guided-Mode-Resonance Filters

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12279423 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2025-04-14),

2. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),

3. 11282845 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2022-03-22),

4. 11239252 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2022-02-01),

5. 10749041 - Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man (2020-08-18),

6. 10720446 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2020-07-21),

7. 10707121 - Solid state memory device, and manufacturing method thereof (2020-07-07),

8. 10615174 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2020-04-07),

9. 10483407 - Methods of forming sin, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods (2019-11-19),

10. 10381377 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2019-08-13),

11. 10157933 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2018-12-18),

12. 10121799 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-11-06),

13. 9893083 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-02-13),

14. 9128383 - Sub-resolution assist devices and methods (2015-09-08),

15. 9075317 - Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate (2015-07-07),

Title: The Innovative Journey of Fei Wang

Introduction: Fei Wang, a talented inventor based in Boise, ID, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Fei Wang's latest patents include a cutting-edge software application for data encryption and a revolutionary device for enhancing solar energy efficiency.

Career Highlights: With a background in computer science, Fei Wang has worked for several tech companies, leading research teams and spearheading projects that have resulted in multiple successful patent applications.

Collaborations: Throughout his career, Fei Wang has collaborated with top engineers and researchers from renowned universities and research institutions, fostering a culture of innovation and excellence.

Conclusion: Fei Wang's dedication to pushing the boundaries of technology and his passion for creating impactful inventions continue to inspire the next generation of inventors and innovators.

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