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Fei Wang

This inventor holds 41 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Technology. Top assignees: Micron Technology Incorporated, Aptina Imaging Corporation, Intel Corporatino. Active years: 2008-2025.

USPTO Granted Patents = 41 (Patent Applications = 3)

% Patents Active = 92.7

Average Co-Inventor Count = 2.4

ph-index = 5

Forward Citations = 142(Granted Patents)

Location History:

Boise, WA (US) (2013)
Boise, ID (US) (2008 - 2024)

Company Filing History:

38 out of 39,149

Micron Technology Incorporated

patents

2 out of 580

Aptina Imaging Corporation

Years Active: 2008-2025

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Areas of Expertise:

Semiconductor Devices

Photomasks

Charge Storage Transistor

Silicon Nitride

Memory Cells

Optical Compensation

DRAM Cell Design

Lithographic Simulation

Integrated Structures

Sub-Resolution Assist Devices

Phase Shift Mask

Guided-Mode-Resonance

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12279423 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2025-04-14),

2. 11937429 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2024-03-19),

3. 11282845 - Semiconductor devices comprising carbon-doped silicon nitride and related methods (2022-03-22),

4. 11239252 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2022-02-01),

5. 10749041 - Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man (2020-08-18),

6. 10720446 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2020-07-21),

7. 10707121 - Solid state memory device, and manufacturing method thereof (2020-07-07),

8. 10615174 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2020-04-07),

9. 10483407 - Methods of forming sin, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods (2019-11-19),

10. 10381377 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2019-08-13),

11. 10157933 - Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus (2018-12-18),

12. 10121799 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-11-06),

13. 9893083 - Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials (2018-02-13),

14. 9128383 - Sub-resolution assist devices and methods (2015-09-08),

15. 9075317 - Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate (2015-07-07),

Title: The Innovative Journey of Fei Wang

Introduction: Fei Wang, a talented inventor based in Boise, ID, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Fei Wang's latest patents include a cutting-edge software application for data encryption and a revolutionary device for enhancing solar energy efficiency.

Career Highlights: With a background in computer science, Fei Wang has worked for several tech companies, leading research teams and spearheading projects that have resulted in multiple successful patent applications.

Collaborations: Throughout his career, Fei Wang has collaborated with top engineers and researchers from renowned universities and research institutions, fostering a culture of innovation and excellence.

Conclusion: Fei Wang's dedication to pushing the boundaries of technology and his passion for creating impactful inventions continue to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.

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