The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Sep. 09, 2014
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Fei Wang, Boise, ID (US);

Ezequiel Vidal Russell, Boise, ID (US);

Chung-Yi Lee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2012.01); G03F 1/32 (2012.01); G03F 1/26 (2012.01); G03F 1/30 (2012.01); G03F 1/38 (2012.01); G03F 1/68 (2012.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); G03F 1/00 (2013.01); G03F 1/26 (2013.01); G03F 1/30 (2013.01); G03F 1/68 (2013.01); G03F 1/38 (2013.01);
Abstract

A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary features of constant pitch at least adjacent the edge region. The edge region includes spaced sub-resolution assist features of the constant pitch of the spaced primary features at least adjacent the device region and which are off-phase by from about 30° to about 150° from +/−180°. Additional embodiments, including methods, are disclosed.


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