Company Filing History:
Years Active: 2011-2015
Title: Ezequiel Vidal Russell: Innovator in Photomask Technology
Introduction
Ezequiel Vidal Russell is a notable inventor based in Boise, ID (US). He has made significant contributions to the field of photomask technology, holding a total of 4 patents. His work focuses on methods of forming photomasks and photolithographically patterning substrates, which are essential in the semiconductor manufacturing process.
Latest Patents
Russell's latest patents include innovative designs for photomasks. One of his key inventions describes a photomask that consists of a substrate featuring a device region and an adjacent edge region over transparent material. The device region is characterized by spaced primary features of constant pitch, particularly adjacent to the edge region. The edge region incorporates spaced sub-resolution assist features that maintain the same constant pitch as the primary features. These features are designed to be off-phase by approximately 30° to 150° from ±180°. Additional embodiments and methods related to this technology are also disclosed in his patents.
Career Highlights
Ezequiel Vidal Russell is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to develop and refine his innovative ideas in photomask technology, contributing to advancements in the field.
Collaborations
Throughout his career, Russell has collaborated with notable colleagues, including John R C Futrell and William Arthur Stanton. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Ezequiel Vidal Russell is a prominent inventor whose work in photomask technology has made a significant impact on the semiconductor industry. His patents reflect a deep understanding of the complexities involved in photolithography and substrate patterning. His contributions continue to shape the future of technology in this critical field.