Icheon, South Korea

Eun-Mi Kim

This inventor holds 6 USPTO granted patents. Top assignee: Hynix Semiconductor Inc.. Active years: 2009-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eun-Mi Kim. Retrieved from https://idiyas.com/inventor/eun-mi-kim-qwxhe8lo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 16.7

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 18(Granted Patents)


Location History:

  • Ichon-shi, KR (2009)
  • Kyoungki-do, KR (2010)
  • Icheon-si, KR (2010 - 2013)

Company Filing History:


Years Active: 2009-2013

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6 patents (USPTO):Explore Patents

Title: Eun-Mi Kim: Semiconductor Device Inventor

Introduction

Eun-Mi Kim is an inventor associated with Icheon, South Korea, and Hynix Semiconductor Inc. Her patent work focuses on semiconductor devices and fabrication methods. The available information lists 6 patents in her portfolio.

Latest Patents

One of Kim’s listed patents is titled “Semiconductor Device and Method of Fabricating the Same.” It describes forming trenches in a substrate and creating device-isolation regions by filling those trenches with insulation. Protruding features along the trench and isolation-region sidewalls reduce part of the width of the active regions.

The supplied patent information lists this same title and description twice. Both entries concern the formation of semiconductor device-isolation structures.

Career Highlights

Kim’s listed work connects her to Hynix Semiconductor Inc. and addresses semiconductor fabrication, particularly trench formation and device isolation. These techniques relate to defining active regions within a semiconductor substrate.

Collaborations

Yong-Tae Cho and Hae-Jung Lee are identified as Kim’s coworkers. The available information does not specify their roles in the listed patent.

Conclusion

Eun-Mi Kim’s listed patent portfolio reflects work on semiconductor devices and fabrication methods, with a focus on trench-based isolation structures that shape active regions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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