The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7553767 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 30, 2009

Filed:

Jun. 20, 2006
Applicants:

Yong-tae Cho, Ichon-shi, KR;

Eun-mi Kim, Ichon-shi, KR;

Inventors:

Yong-Tae Cho, Ichon-shi, KR;

Eun-Mi Kim, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Kyoungki-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor includes: etching a substrate to a predetermined depth to form an upper trench with taper edges; etching the substrate beneath the upper trench to form a lower trench with approximately vertical edges; forming a device isolation layer disposed within the upper and lower trenches; and etching an active region of the substrate defined by the upper and lower trenches to a predetermined depth to form a recess pattern for a gate.


Find Patent Forward Citations

Cho, Yong-Tae. (2009). Method for fabricating semiconductor device having taper type trench (U.S. Patent No. 7553767). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7553767

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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