The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Dec. 26, 2006
Applicants:
Yong-tae Cho, Kyoungki-do, KR;
Eun-mi Kim, Kyoungki-do, KR;
Inventors:
Yong-Tae Cho, Kyoungki-do, KR;
Eun-Mi Kim, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Ichon-shi, Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device includes forming an isolation structure in a substrate to define an active region, forming a recess mask pattern over the isolation structure and the active region, etching the isolation structure exposed by the recess mask pattern to a certain depth, etching the substrate to form a recess pattern, and forming a gate electrode over the recess pattern.
Cho, Yong-Tae. (2010). Method of fabricating recess gate in semiconductor device (U.S. Patent No. 7642161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7642161
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