The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Dec. 30, 2008
Applicants:
Yong-tae Cho, Icheon-si, KR;
Hae-jung Lee, Icheon-si, KR;
Eun-mi Kim, Icheon-si, KR;
Kyeong-hyo Lee, Icheon-si, KR;
Inventors:
Yong-Tae Cho, Icheon-si, KR;
Hae-Jung Lee, Icheon-si, KR;
Eun-Mi Kim, Icheon-si, KR;
Kyeong-Hyo Lee, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device and related method of fabricating the same, a hard mask layer is formed over a substrate, portions of the hard mask layer and the substrate are etched to form trenches having protruding portions at sidewalls, and an insulation layer buried in the trenches is formed to form device isolation regions having protruding portions at sidewalls, wherein the device isolation regions decrease a portion of a width of active regions.