Iksan-si, South Korea

Eun-Hye Park


Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Iksan-si, KR (2015 - 2017)
  • Hwaseong-si, KR (2017)

Company Filing History:


Years Active: 2015-2017

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5 patents (USPTO):Explore Patents

Title: Eun-Hye Park: Innovator in Semiconductor Technology

Introduction

Eun-Hye Park is a prominent inventor based in Iksan-si, South Korea. She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her innovative work focuses on enhancing the performance and reliability of nonvolatile memory devices.

Latest Patents

Eun-Hye Park's latest patents include a method for driving a nonvolatile memory device. This method utilizes a resistive element to store data in a page buffer, which includes a first data block and a second data block. The process involves writing the first data block to a memory cell, performing a verify-read operation, and subsequently writing the second data block while ensuring both blocks are smaller than the page buffer in size. Another notable patent is for a semiconductor device featuring a high-reliability solder joint. This device incorporates a high-temperature solder on a conductive pad, with a low-temperature solder layered on top, ensuring enhanced reliability through a barrier layer.

Career Highlights

Eun-Hye Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. Her work at Samsung has allowed her to push the boundaries of semiconductor technology and contribute to advancements in memory devices.

Collaborations

Eun-Hye has collaborated with talented coworkers, including Hyo-Jin Kwon and Hoi-ju Chung. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Eun-Hye Park's contributions to semiconductor technology and her innovative patents highlight her role as a key inventor in the industry. Her work continues to influence advancements in nonvolatile memory devices, showcasing her dedication to innovation.

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