The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Apr. 14, 2015
Applicants:
Soon-bum Kim, Suwon-si, KR;
Tae-eun Kim, Hwaseong-si, KR;
Eun-hye Park, Hwaseong-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/0562 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05609 (2013.01); H01L 2224/05613 (2013.01); H01L 2224/05618 (2013.01); H01L 2224/05623 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05649 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05672 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/11003 (2013.01); H01L 2224/1111 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13076 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13123 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13149 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/13172 (2013.01); H01L 2224/13181 (2013.01); H01L 2224/13565 (2013.01); H01L 2224/13686 (2013.01); H01L 2224/16058 (2013.01); H01L 2224/16503 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81193 (2013.01);
Abstract
Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.