The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Apr. 07, 2015
Applicant:

Samsung Electronics Co., Ltd., Hwaseong-si, Gyeonggi-do, KR;

Inventors:

Eun-Hye Park, Iksan-si, KR;

Jun-Ho Shin, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G06F 11/00 (2006.01); G11C 16/34 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G06F 11/00 (2013.01); G11C 16/3459 (2013.01); G06F 12/0246 (2013.01); G06F 2212/1032 (2013.01);
Abstract

A method for driving a nonvolatile memory device using a resistive element is provided. The method includes storing data in a page buffer, the data including a first data block and a second data block, writing the first data block to a memory cell, performing a verify-read operation on the first data block of the memory cell region, writing the second data block to the memory cell region, and performing a verify-read operation on the second data block of the memory cell region, wherein the first data block and the second data block are smaller than the page buffer in size.


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