Jun-Ho Shin

Title: Innovations of Jun-Ho Shin

Introduction

Jun-Ho Shin is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of five patents. His work focuses on enhancing the performance and efficiency of memory technology.

Latest Patents

One of Jun-Ho Shin's latest patents is a memory device designed for compensating for the current of off cells and its operating method. This innovative memory device includes a memory cell array with multiple memory cells arranged at the intersections of word lines and bit lines. It features a sense amplifier that amplifies the voltage difference between a selected word line connected to a memory cell and a reference voltage during read operations. Additionally, it incorporates a leakage current compensation circuit that addresses the total leakage current generated by unselected memory cells connected to the selected word line in the read operation mode.

Career Highlights

Jun-Ho Shin is currently employed at Samsung Electronics Co., Ltd., where he continues to develop cutting-edge memory technologies. His expertise in this area has positioned him as a key figure in the advancement of memory device innovation.

Collaborations

He has collaborated with notable coworkers, including Venkataramana Gangasani and Moo-sung Kim, contributing to various projects that enhance memory device functionality.

Conclusion

Jun-Ho Shin's work in memory device innovation exemplifies the impact of dedicated inventors in the technology sector. His contributions continue to shape the future of memory technology and improve device performance.