The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2007
Filed:
Jun. 30, 2005
Sung-ho Choi, Gyeonggi-do, KR;
Jun-ho Shin, Gyeonggi-do, KR;
Seung-hoon Lee, Gyeonggi-do, KR;
Abstract
An internal supply voltage generation circuit is provided that is within a semiconductor memory device, and that is configured to generate an internal supply voltage to a memory array in the semiconductor memory device. The internal supply voltage generation circuit includes an internal driving unit, an internal transmission unit, and an internal sensing unit. The internal driving unit is configured to generate a driving current and a preliminary voltage responsive to an external supply voltage that is supplied from external to the semiconductor memory device, and it varies a magnitude of the driving current responsive to a driving control signal. The internal transmission unit is configured to generate the internal supply voltage responsive to the preliminary voltage from the internal driving unit, and to vary a level of the internal supply voltage to be at least a defined voltage difference less than a boosted voltage. The boosted voltage is greater than the external supply voltage. The internal sensing unit is configured to generate the driving control signal responsive to the internal supply voltage so that the internal supply voltage is maintained at a constant level.