The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2015

Filed:

Feb. 04, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyo-Jin Kwon, Seoul, KR;

Hoi-Ju Chung, Yongin-si, KR;

Chae-Hoon Kim, Hwaseong-si, KR;

Yong-Jin Kwon, Suwon-si, KR;

Eun-Hye Park, Iksan-si, KR;

Yong-Jun Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0061 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 2213/72 (2013.01);
Abstract

A nonvolatile memory device includes a memory array having multiple nonvolatile memory cells, a first read circuit and a second read circuit. The first read circuit is configured to read first data from the memory array during a first read operation and to provide one or more protection signals indicating a victim period during the first read operation. The second read circuit is configured to read second data from the memory array during a second read operation and to provide one or more check signals indicating an aggressor period during the second read operation.


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