Chae-Hoon Kim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 5 patents. His work focuses on enhancing memory cell sensing and improving the efficiency of memory devices.

Latest Patents

Chae-Hoon Kim's latest patents include a page buffer and a method of sensing a memory cell using the same. The page buffer consists of a first precharge circuit, a second precharge circuit, and a sense amplifying circuit. The first precharge circuit is designed to precharge a bitline connected to a nonvolatile memory cell, while the second precharge circuit precharges a sensing node connected to the bitline. The sensing node plays a crucial role in detecting the state of the nonvolatile memory cell. Additionally, the sense amplifying circuit stores state information that represents the memory cell's condition. His other patent involves a nonvolatile memory device that features read circuits capable of performing Read-While-Write (RWW) and Read-Modify-Write (RMW) operations.

Career Highlights

Chae-Hoon Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of nonvolatile memory devices, making them more efficient and reliable.

Collaborations

Some of his notable coworkers include Dae-Han Kim and Tae-Yun Lee, who have collaborated with him on various projects within the company.

Conclusion

Chae-Hoon Kim's contributions to the field of nonvolatile memory technology are noteworthy. His innovative patents and ongoing work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in this domain.

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