Wayland, MA, United States of America

Elsa K Tong



Average Co-Inventor Count = 1.7

ph-index = 4

Forward Citations = 50(Granted Patents)


Company Filing History:


Years Active: 1988-2009

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5 patents (USPTO):Explore Patents

Title: Innovations by Elsa K Tong

Introduction

Elsa K Tong is a prominent inventor based in Wayland, MA (US). She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on improving the efficiency and functionality of semiconductor devices.

Latest Patents

Among her latest patents is a groundbreaking invention titled "Semiconductor devices having improved field plates." This patent describes a field effect transistor device that features source and drain electrodes in ohmic contact with a semiconductor. The innovative gate electrode-field plate structure is designed to enhance the performance of the device. Another notable patent is the "Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor." This method outlines a sophisticated process for creating a high electron mobility transistor, utilizing a series of selective etching techniques to achieve precise results.

Career Highlights

Elsa K Tong has established herself as a key figure in her field through her work at Raytheon Company. Her expertise in semiconductor technology has led to advancements that benefit various applications in electronics and communications.

Collaborations

Throughout her career, Elsa has collaborated with notable colleagues, including Thomas E Kazior and Colin Steven Whelan. These partnerships have fostered innovation and contributed to the success of her projects.

Conclusion

Elsa K Tong's contributions to semiconductor technology exemplify her dedication to innovation and excellence. Her patents reflect her commitment to advancing the field and improving device performance.

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