Elizabeth J Weitzman

Title: Elizabeth J. Weitzman: Semiconductor Process Inventor

Introduction

Elizabeth J. Weitzman is an inventor associated with semiconductor manufacturing innovations. Based in Austin, Texas, she is credited with 4 patents. Her work includes methods for forming tantalum nitride and tantalum silicon nitride layers for use as diffusion barriers in semiconductor devices.

Latest Patents

Weitzman’s listed patent work includes methods for forming a semiconductor device and forming a barrier layer. Both describe using metal-organic chemical deposition to create refractory metal nitride or refractory metal silicon nitride films.

The methods use ethyltris(diethylamido)tantalum and ammonia in chemical vapor deposition to form tantalum nitride. Adding silane enables the formation of tantalum silicon nitride. The described processes can operate at wafer temperatures below approximately 400°C and produce films with relatively low carbon content. The resulting layers are described as conformal and as having useful diffusion-barrier properties.

Career Highlights

Weitzman’s patent record reflects work on semiconductor fabrication processes, particularly the formation of thin-film barrier layers. These materials and deposition methods address manufacturing needs involving diffusion control and conformal coverage.

Collaborations

Weitzman is associated with Motorola Corporation. Her listed coworkers include Ajay Jain and Ramnath Venkatraman.

Conclusion

Elizabeth J. Weitzman’s documented inventions focus on deposition methods for tantalum-based barrier layers, contributing to semiconductor device fabrication through processes designed for conformal films and effective diffusion control.