Motorola Corporation

Elizabeth J Weitzman

Robert W Fiordalice

Ajay Jain

Ramnath Venkatraman

T P Ong

A refractory Metal Nitride and a refractory metal Silicon Nitride layer ( ) can be formed using metal organic chemical deposition. More specifically, tantalum nitride (TaN) ( ) can be formed by a Chemical Vapor Deposition (CVD) using Ethyltrikis (Diethylamido) Tantalum (ETDET) and ammonia (NH ). By the inclusion of silane (SiH ), tantalum silicon nitride (TaSiN) ( ) layer can also be formed. Both of these layers can be formed at wafer temperatures lower than approximately 400&deg; C. with relatively small amounts of carbon (C) within the film. Therefore, the embodiments of the present invention can be used to form tantalum nitride (TaN) or tantalum silicon nitride (TaSiN) ( ) that is relatively conformal and has reasonably good diffusion barrier properties.

Method of forming a semiconductor device

A refractory Metal Nitride and a refractory metal Silicon Nitride layer (64) can be formed using metal organic chemical deposition. More specifically, tantalum nitride (TaN) (64) can be formed by a Chemical Vapor Deposition (CVD) using Ethyltrikis (Diethylamido) Tantalum (ETDET) and ammonia (NH.sub.3). By the inclusion of silane (SiH.sub.4), tantalum silicon nitride (TaSiN) (64) layer can also be formed. Both of these layers can be formed at wafer temperatures lower than approximately 400.degree. C. with relatively small amounts of carbon (C) within the film. Therefore, the embodiments of the present invention can be used to form tantalum nitride (TaN) or tantalum silicon nitride (TaSiN) (64) that is relatively conformal and has reasonably good diffusion barrier properties.

Method of forming a barrier layer

An interconnect structure (10) is formed by filling a dual damascene structure (12) with conductive material. A barrier layer (13) is formed to serve as a seed layer and to prevent the out diffusion of copper. A first conductive layer (14) is formed to fill a first portion (21) of the damascene structure (12). A second conductive layer (16) is then formed to complete the filling of a second portion (22) of the damascene structure. A polishing process is then used to remove any excess material.

Method of forming an interconnect structure

A process for fabrication of a metallized interconnect structure includes the formation of an inlaid interconnect (42) overlying an aluminum layer (34). The inlaid interconnect (42) is formed within an interlevel dielectric layer that is processed to contain an interconnect channel (24) and a via opening (14) residing at the bottom of the interconnect channel (24). The aluminum layer (34) is selectively deposited to at least partially fill the via opening (14) at the bottom of an interconnect channel (24). An adhesion layer (36) is deposited to overlie the aluminum layer (34) within the via opening (14), and a second aluminum layer (38) is blanket deposited and planarized to form the inlaid interconnect (42) in the interconnect channel (24).

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Austin, TX, United States of America

Elizabeth J Weitzman