The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2002
Filed:
May. 12, 2000
Ajay Jain, Austin, TX (US);
Elizabeth Weitzman, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A refractory Metal Nitride and a refractory metal Silicon Nitride layer ( ) can be formed using metal organic chemical deposition. More specifically, tantalum nitride (TaN) ( ) can be formed by a Chemical Vapor Deposition (CVD) using Ethyltrikis (Diethylamido) Tantalum (ETDET) and ammonia (NH ). By the inclusion of silane (SiH ), tantalum silicon nitride (TaSiN) ( ) layer can also be formed. Both of these layers can be formed at wafer temperatures lower than approximately 400° C. with relatively small amounts of carbon (C) within the film. Therefore, the embodiments of the present invention can be used to form tantalum nitride (TaN) or tantalum silicon nitride (TaSiN) ( ) that is relatively conformal and has reasonably good diffusion barrier properties.