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Eiji Hasunuma

USPTO Granted Patents = 13 (Patent Applications = 2)

Average Co-Inventor Count = 1.3

ph-index = 3

Forward Citations = 35(Granted Patents)

Location History:

Hyogo, JP (2003 - 2004)
Chuo-ku, JP (2012 - 2013)
Tokyo, JP (2003 - 2019)

Company Filing History:

Renesas Technology Corp.

patents

4. 2 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

where one patent can have more than one assignee

Years Active: 2003-2019

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. RE47240 - Semiconductor storage device (2019-02-11),

2. 9147686 - Method for forming semiconductor device (2015-09-29),

3. 8847353 - Semiconductor device and data processing system using the same (2014-09-30),

4. 8786000 - Semiconductor device suppressing peeling of lower electrode of capacitor (2014-07-22),

5. 8378499 - Semiconductor storage device (2013-02-19),

6. 8105907 - Manufacturing method of semiconductor memory device (2012-01-31),

7. 8093724 - Semiconductor storage device (2012-01-10),

8. 7723184 - Semiconductor device and manufacture method therefor (2010-05-25),

9. 6815318 - Manufacturing method of semiconductor device (2004-11-09),

10. 6765251 - Semiconductor device having interconnection structure (2004-07-20),

11. 6710392 - Semiconductor memory device with increased capacitance and reduced performance fluctuation (2004-03-23),

12. 6596582 - Method of manufacturing a semiconductor device (2003-07-22),

13. 6504192 - Semiconductor device (2003-01-07),

Title: Eiji Hasunuma: Innovator in Semiconductor Technology

Introduction: Eiji Hasunuma is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 13 patents, Hasunuma has demonstrated a commitment to innovation and development in this highly competitive industry.

Latest Patents: Among his latest inventions is a groundbreaking semiconductor storage device. This device features multiple active regions shaped in a band within a semiconductor substrate, which allows for a multitude of functionalities. The design includes an array of word lines intersecting the active regions and a series of cell contacts, with specially designed first and second cell contacts positioned strategically to enhance performance. Additionally, Hasunuma's method for forming a semiconductor device outlines a comprehensive process involving interlayer insulating films and contact holes, facilitating the formation of both cell and peripheral transistor contacts.

Career Highlights: Eiji Hasunuma has had a distinguished career, enhancing technological advancements while working for notable companies such as Elpida Memory, Inc. and Ps4 Luxco S.a.r.l. His role in these organizations allowed him to push the boundaries of semiconductor technology, leading to his prolific patent portfolio.

Collaborations: Throughout his career, Hasunuma has collaborated with talented individuals like Shigeru Shiratake and Nobuyuki Sako. Their collective expertise and shared vision have contributed to groundbreaking developments in the semiconductors sector.

Conclusion: Eiji Hasunuma's dedication to innovation in semiconductor technology has resulted in numerous patents that underscore his impact in the field. His work not only exemplifies cutting-edge technological advancement but also inspires future generations of inventors and engineers to pursue breakthroughs in the semiconductor industry.

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