The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2004
Filed:
Jan. 24, 2003
Applicant:
Inventors:
Eiji Hasunuma, Hyogo, JP;
Akira Matsumura, Hyogo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/1425 ;
Abstract
When an opening diameter of a top end of a substantially column-shaped contact hole is S1, an opening diameter of a top end of a substantially column-shaped contact hole is T1, and a thickness of a silicon insulating layer is h, then contact holes are formed so as to satisfy the following conditional expression 1. T1/h<tan &thgr;1<S1/h (expression 1). With this formation method, a manufacturing method of a semiconductor device can be provided which does not need covering processing using a photolithography technique when impurity regions of different conductivity types are formed using contact holes.