The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2004

Filed:

Aug. 15, 2002
Applicant:
Inventor:

Eiji Hasunuma, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7108 ;
U.S. Cl.
CPC ...
H01L 2/7108 ;
Abstract

A semiconductor memory device includes a conductive layer filling a contact hole, a bottom electrode having a depression and electrically connected to the conductive layer, a dielectric film formed on the bottom electrode along the depression, and a top electrode formed on the dielectric film. The conductive layer and the dielectric film directly contact each other at a top surface of the conductive layer. The conductive layer contains polycrystalline silicon and dopant having a relatively low concentration and the bottom electrode contains polycrystalline silicon and dopant having a relatively high concentration. The semiconductor memory device can thus have a capacitor small in size and still sufficiently large in capacitance.


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