Eiichiro Nishimura is a prominent inventor based in Ome, Japan. He has made significant contributions to the field of oxide semiconductors, holding a total of 9 patents. His work focuses on developing materials that enhance the performance of semiconductor devices.

Latest Patents

Nishimura's latest patents include innovations related to oxide sintered bodies, sputtering targets, and oxide semiconductor thin films. One of his notable inventions provides an oxide sintered compact that achieves low carrier density and high carrier mobility when used to create an oxide semiconductor thin film through a sputtering method. This oxide sintered compact contains oxides of indium, gallium, and aluminum, with specific atomic ratios for gallium and aluminum. Another patent describes an oxide sintered body that can produce an amorphous oxide semiconductor thin film with low carrier concentration and high mobility, utilizing a sputtering target made from the oxide sintered body.

Career Highlights

Eiichiro Nishimura is associated with Sumitomo Metal Mining Company, Ltd., where he continues to advance semiconductor technology. His research has led to breakthroughs that improve the efficiency and effectiveness of oxide semiconductors, which are crucial for various electronic applications.

Collaborations

Nishimura has collaborated with notable colleagues, including Tokuyuki Nakayama and Masashi Iwara. Their combined expertise has contributed to the successful development of innovative semiconductor materials.

Conclusion

Eiichiro Nishimura's work in oxide semiconductor technology exemplifies the impact of innovative thinking in the field of electronics. His patents and collaborations highlight his commitment to advancing semiconductor materials, which are essential for modern technology.

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