The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Jul. 16, 2014
Sumitomo Metal Mining Co., Ltd., Tokyo, JP;
SUMITOMO METAL MINING CO., LTD., Tokyo, JP;
Abstract
Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured InOphase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a InOphase having a bixbyite structure as the main crystal phase, and has a GaInOphase having a β-GaO-type structure, or a GaInOphase having a β-GaO-type structure and a (Ga, In)Ophase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile