logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9543447 B1

PDFFull Text
Expired
Date of Patent:
Jan. 10, 2017

Filed:

Mar. 06, 2014

Oxynitride semiconductor thin film

Applicant:

Sumitomo Metal Mining Co., Ltd., Tokyo, JP;

Inventors:

Eiichiro Nishimura, Tokyo, JP;

Tokuyuki Nakayama, Tokyo, JP;

Masashi Iwara, Tokyo, JP;

Assignee:

SUMITOMO METAL MINING CO., LTD., Tokyo, JP;

Attorney:

Katten Muchin Rosenman LLP

Primary Examiner:

Kenneth Parker

Assistant Examiner:

Bo Fan

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); C01B 21/082 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C01B 21/0821 (2013.01); H01L 21/02521 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02667 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); C01P 2006/40 (2013.01);
Abstract

The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O, and N or an amorphous oxynitride semiconductor thin film containing In, O, N, and an additional element M, where M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements, at a heating temperature of 200° C. or more for a heating time of 1 minute to 120 minutes.

Find Patent Forward Citations

Nishimura, Eiichiro. (2017). Oxynitride semiconductor thin film (U.S. Patent No. 9543447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9543447

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…