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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9688580 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Apr. 15, 2015

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Applicant:

Sumitomo Metal Mining Co., Ltd., Tokyo, JP;

Inventors:

Tokuyuki Nakayama, Ome, JP;

Eiichiro Nishimura, Ome, JP;

Fumihiko Matsumura, Ome, JP;

Masashi Iwara, Ome, JP;

Assignee:

SUMITOMO METAL MINING CO., LTD., Tokyo, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Douglas McGinty

Int. Cl.
CPC ...
C04B 35/45 (2006.01); C04B 35/00 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C04B 35/622 (2006.01); C23C 14/58 (2006.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
C04B 35/45 (2013.01); C04B 35/00 (2013.01); C04B 35/62218 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/087 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); C23C 14/5806 (2013.01); H01J 37/3429 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/02667 (2013.01); H01L 29/04 (2013.01); H01L 29/6675 (2013.01); H01L 29/78693 (2013.01); C04B 2235/3282 (2013.01); C04B 2235/3286 (2013.01);
Abstract

Provided are: a sintered oxide which is capable of obtaining low carrier density and high carrier mobility when configured as an oxide semiconductor thin film by using a sputtering method; and a sputtering target which uses the same. The sintered oxide contains indium, gallium and copper as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, when expressed as an atomic ratio (Ga/(In+Ga)), the copper content to be at least 0.001 and less than 0.03 when expressed as an atomic ratio (Cu/(In+Ga+Cu)), and for the sintering to be performed at 1,200-1,550° C., inclusive. A crystalline oxide semiconductor thin film obtained by forming this sintered oxide as a sputtering target makes it possible to achieve a carrier density of 3.0×10cmor lower, and a carrier mobility of 10 cmVsecor higher.

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