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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10128108 B1

PDFFull Text
Date of Patent:
Nov. 13, 2018

Filed:

Nov. 16, 2015

Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target

Applicant:

Sumitomo Metal Mining Co., Ltd., Tokyo, JP;

Inventors:

Eiichiro Nishimura, Ome, JP;

Tokuyuki Nakayama, Ome, JP;

Fumihiko Matsumura, Ome, JP;

Assignee:

SUMITOMO METAL MINING CO., LTD., Tokyo, JP;

Attorney:

Kratz, Quintos & Hanson, LLP

Primary Examiner:

Mark Kopec

Int. Cl.
CPC ...
H01B 1/08 (2006.01); C23C 14/00 (2006.01); C04B 35/01 (2006.01); H01L 21/02 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01L 21/465 (2006.01); H01L 29/24 (2006.01); C03C 17/245 (2006.01); C04B 35/626 (2006.01); C23C 14/58 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C03C 17/245 (2013.01); C04B 35/01 (2013.01); C04B 35/6261 (2013.01); C23C 14/08 (2013.01); C23C 14/3407 (2013.01); C23C 14/3414 (2013.01); C23C 14/5806 (2013.01); H01B 1/08 (2013.01); H01J 37/3426 (2013.01); H01L 21/02422 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); H01L 21/02664 (2013.01); H01L 21/465 (2013.01); H01L 29/247 (2013.01); C03C 2217/23 (2013.01); C03C 2218/156 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/604 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/72 (2013.01); C04B 2235/76 (2013.01); C04B 2235/80 (2013.01); C04B 2235/96 (2013.01); H01L 29/7869 (2013.01);
Abstract

Provided are an oxide sintered compact whereby low carrier density and high carrier mobility are obtained when the oxide sintered compact is used to obtain an oxide semiconductor thin film by a sputtering method, and a sputtering target which uses the oxide sintered compact. This oxide sintered compact contains oxides of indium, gallium, and aluminum. The gallium content is from 0.15 to 0.49 by Ga/(In+Ga) atomic ratio, and the aluminum content is from 0.0001 to less than 0.25 by Al/(In+Ga+Al) atomic ratio. A crystalline oxide semiconductor thin film formed using this oxide sintered compact as a sputtering target is obtained at a carrier density of 4.0×10cmor less and a carrier mobility of 10 cmVsecor greater.

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