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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Dustin Kenneth Slisher

USPTO Granted Patents = 12

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2012 - 2014)
  • Wappingers Falls, NY (US) (2008 - 2015)

Company Filing History:

goldMedal12 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2008-2015

where 'Filed Patents' based on already Granted Patents

12 patents (USPTO):
1. 9064972 - Method of forming a gated diode structure for eliminating RIE damage from cap removal (2015-06-23),
2. 8980720 - eFUSE and method of fabrication (2015-03-17),
3. 8912630 - Integrated circuit including thermal gate, related method and design structure (2014-12-16),
4. 8912626 - eFuse and method of fabrication (2014-12-16),
5. 8779551 - Gated diode structure for eliminating RIE damage from cap removal (2014-07-15),
6. 8652922 - Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture (2014-02-18),
7. 8610217 - Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuit (2013-12-17),
8. 8541864 - Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture (2013-09-24),
9. 8486796 - Thin film resistors and methods of manufacture (2013-07-16),
10. 8298904 - Compact thermally controlled thin film resistors utilizing substrate contacts and methods of manufacture (2012-10-30),
11. 8234001 - Tool commonality and stratification analysis to enhance a production process (2012-07-31),
12. 7381577 - Early detection test for identifying defective semiconductor wafers in a front-end manufacturing line (2008-06-03),

Title: Innovations of Dustin Kenneth Slisher

Introduction

Dustin Kenneth Slisher is a prominent inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on improving the efficiency and reliability of semiconductor structures.

Latest Patents

One of his latest patents is titled "Method of forming a gated diode structure for eliminating RIE damage from cap removal." This invention describes a method for fabricating a semiconductor structure that includes gated-diodes with a silicided anode and cathode, along with a high-K gate stack. The innovation aims to eliminate cap removal RIE in a gate-first High-K metal gate flow, thereby preserving the ideal junction characteristics of the diode. Another notable patent is the "eFUSE and method of fabrication," which presents an improved eFuse design. This invention involves forming a cavity in a substrate to create a polysilicon line with varying depths, reducing the risk of the polysilicon line entering a fully silicided state.

Career Highlights

Dustin is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative approach have positioned him as a valuable asset to his team.

Collaborations

Dustin has collaborated with notable colleagues, including Robert Russell Robison and Joseph M Lukaitis. Their combined efforts have contributed to advancements in semiconductor technology and innovation.

Conclusion

Dustin Kenneth Slisher's contributions to the field of semiconductor technology are noteworthy, with a focus on enhancing the performance and reliability of semiconductor structures. His innovative patents reflect his commitment to advancing technology in this critical area.

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