The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2012

Filed:

Jan. 18, 2011
Applicants:

Joseph M. Lukaitis, Pleasant Valley, NY (US);

Jed H. Rankin, Richmond, VT (US);

Robert R. Robison, Colchester, VT (US);

Dustin K. Slisher, Wappingers Falls, NY (US);

Timothy D. Sullivan, Underhill, VT (US);

Inventors:

Joseph M. Lukaitis, Pleasant Valley, NY (US);

Jed H. Rankin, Richmond, VT (US);

Robert R. Robison, Colchester, VT (US);

Dustin K. Slisher, Wappingers Falls, NY (US);

Timothy D. Sullivan, Underhill, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor structure includes forming a resistor on an insulator layer over a substrate, and forming at least one dielectric layer over the resistor. The method also includes forming a substrate contact through the at least one dielectric layer, through the resistor, through the insulator layer, and into the substrate. The substrate contact comprises a high thermal conductivity material.


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