Suwon, South Korea

Donghyun Roh

This inventor holds 27 USPTO granted patents and 11 published patent applications and 4 EPO patents, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Eletronica Da Amazonia Ltda.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donghyun Roh. Retrieved from https://idiyas.com/inventor/donghyun-roh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 81.5

 

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Yongin-si, KR (2020)
  • Gyeonggi-do, KR (2021)
  • Suwon-si, KR (2016 - 2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Integrated Circuit
Semiconductor Device
Manufacturing Method
Field Effect Transistor
Multi-Channel
Capped Air-Gap Spacer
Physical Activity Recommendations
Electronic Device
Non-Transitory Storage
Semantic Entity Extraction
Text Message Processing
27 patents (USPTO):Explore Patents

Title: Innovative Contributions of Donghyun Roh in Semiconductor Technology

Introduction

Donghyun Roh, a prominent inventor based in Suwon-si, South Korea, holds an impressive portfolio of 22 patents primarily focused on advancements in semiconductor technology. His work has significantly contributed to the field, showcasing innovative methods and devices designed to enhance the performance and efficiency of semiconductor components.

Latest Patents

Among his latest innovations, Donghyun Roh has introduced a multi-bridge channel field effect transistor with multiple inner spacers. This semiconductor device features active fins extending in a first direction on a substrate, accompanied by an isolation insulating layer that covers a portion of the side surfaces of the active fins. The design includes vertically stacked channel layers that are spaced apart and a gate pattern that extends in a second direction across both the active fins and the channel layers. The presence of spacer layers on either side of the gate pattern ensures improved functionality, allowing for a lower surface of the gate pattern to make contact with the isolation insulating layer. This architectural innovation significantly enhances the efficiency of the device.

Another notable patent is a method for forming a semiconductor device with a capped air-gap spacer. This method details the formation of a sacrificial gate structure on the active region, followed by a comprehensive spacer structure that includes a first and second spacer and an air-gap spacer. This innovative approach, where the air-gap spacer is capped by bending an upper portion of the second spacer towards the first, allows for a more efficient assembly process and improved device performance.

Career Highlights

Donghyun Roh is affiliated with Samsung Electronics Co., Ltd., a leading global technology company. His contributions have not only advanced the company's capabilities in semiconductor technology but also positioned him as a key player in the field of electronic innovations.

Collaborations

Throughout his career, Donghyun Roh has worked closely with esteemed colleagues, including Sunki Min and Chaeho Na. These collaborations have resulted in the development of several cutting-edge technologies, further cementing his reputation as an influential inventor.

Conclusion

Donghyun Roh’s ongoing commitment to innovation in semiconductor technology is evident through his extensive patent portfolio and collaborative efforts. His recent inventions demonstrate a blend of creativity and practical application, which continues to shape the future of electronic devices and systems. As advancements in this field progress, the impact of his work is expected to resonate within the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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