The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Apr. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangshin Jang, Seoul, KR;
Wookyung You, Hwaseong-si, KR;
Sangkoo Kang, Yongin-si, KR;
Donghyun Roh, Suwon-si, KR;
Koungmin Ryu, Hwaseong-si, KR;
Jongmin Baek, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device including a first conductive layer on a substrate, a second conductive layer on the first conductive layer, a contact structure between the first and second conductive layers, and a barrier structure surrounding a lower region of a side surface of the second conductive layer, wherein the contact structure includes a contact conductive layer having a first upper surface portion and a second upper surface extending from the first upper surface portion and being concave, and a gap-fill pattern fills a space between the second upper surface portion and the second conductive layer and includes a first gap-fill insulating layer including a metal element and a second gap-fill insulating layer including a silicon element, and the barrier structure includes a first etch stop layer and a barrier layer that include same materials as the first insulating material and the second insulating material, respectively, may be provided.