The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Nov. 15, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangkoo Kang, Yongin-si, KR;
Sungsoo Kim, Hwaseong-si, KR;
Sunki Min, Seoul, KR;
Iksoo Kim, Yongin-si, KR;
Donghyun Roh, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method includes: forming a sacrificial gate structure on the active region; forming a spacer structure including a first spacer, a second spacer, and an air-gap spacer, the air-gap spacer capped by bending an upper portion of the second spacer toward an upper portion of the first spacer; forming an insulating structure on the sides of the spacer structure; forming a gap region; and forming a gate structure including a gate dielectric layer, a gate electrode, and a gate capping layer in the gap region. The upper portion of the second spacer is in physical contact with the upper portion of the first spacer on a contact surface, and a lowermost end of the contact surface is on a level higher than an upper surface of the gate electrode with the substrate being a reference base level.