The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Sep. 20, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chaeho Na, Suwon-si, KR;
Sangkoo Kang, Suwon-si, KR;
Donghyun Roh, Suwon-si, KR;
Dahye Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An integrated circuit device includes a gate line disposed on a fin-type active region, a source/drain region disposed on the fin-type active region, and an insulating spacer structure that covers the gate line and the source/drain region. The insulating spacer structure includes a first spacer portion that covers the sidewall of the gate line, a second spacer portion integrally connected to the first spacer portion, where the second spacer portion protrudes in a first lateral direction and covers a partial region of a sidewall of the source/drain region, and a spacer corner portion that fills a corner space defined by the gate line and the source/drain region between the first spacer portion and the second spacer portion. The insulating spacer structure has a single film structure that includes a SiOC film doped with about 0 at % to about 5 at % of nitrogen atoms.