Seongnam, South Korea

Dong-Il Bae

This inventor holds 28 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong-Il Bae. Retrieved from https://idiyas.com/inventor/dong-il-bae-ghl8b14e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 76(Granted Patents)


Location History:

  • Daejeon, KR (2012)
  • Incheon, KR (2011 - 2023)
  • Seongnam-si, KR (2019 - 2024)

Company Filing History:


Years Active: 2011-2025

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Areas of Expertise:
Fin-Type Transistor
Multi-Gate Structure
Memory Device
Nonvolatile Memory Cell
Integrated Circuit
Gate Electrode
Manufacturing Method
Stacked Channels
Silicide Layer
Fabrication Method
28 patents (USPTO):Explore Patents

Innovations in Semiconductor Technology: The Works of Dong-Il Bae

Introduction

Dong-Il Bae, a prolific inventor based in Seongnam-si, South Korea, has significantly contributed to the field of semiconductor technology. With a remarkable portfolio of 28 patents, his work is vital in advancing modern electronic devices. Bae is currently associated with Samsung Electronics Co., Ltd., one of the leading companies in the technology sector.

Latest Patents

Among his latest innovations are two key patents related to semiconductor devices and methods of manufacturing these devices. The first patent outlines a semiconductor device that incorporates a first transistor in one region of a substrate and a second transistor in another region. This device features multiple semiconductor patterns, gate electrodes, gate dielectric layers, and tailored source/drain regions for optimized performance.

In the second patent, Bae emphasizes the construction of semiconductor devices with varying channel configurations across different substrate regions. This design incorporates first and second channels separated by vertical spacing, alongside distinct gate structures that enhance the functionality of the device while maintaining compact dimensions.

Career Highlights

Dong-Il Bae's career is marked by his role at Samsung Electronics Co., Ltd., where his innovative mindset has been instrumental in developing cutting-edge semiconductor technologies. His extensive knowledge and experience in the field have led to numerous patents that address current technological challenges, paving the way for future advancements.

Collaborations

Bae's collaborative efforts with fellow innovators Geum-jong Bae and Jung-Gil Yang have amplified the impact of his work. Together, they have successfully ventured into complex projects that push the boundaries of semiconductor technology, fostering a spirit of teamwork that is vital for innovation in such a competitive industry.

Conclusion

Dong-Il Bae exemplifies the dedication and ingenuity that drives progress in semiconductor research and development. Through his 28 patents, he continues to shape the future of electronics, ensuring that advancements in technology keep pace with the rapid demands of the market. His contributions are a testament to the vital role inventors play in the relentless pursuit of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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