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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11222949 B1

PDFFull Text
Date of Patent:
Jan. 11, 2022

Filed:

Aug. 18, 2020

Semiconductor devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-Min Song, Hwaseong-si, KR;

Woo-Seok Park, Ansan-si, KR;

Jung-Gil Yang, Hwaseong-si, KR;

Geum-Jong Bae, Suwon-si, KR;

Dong-Il Bae, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd.;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Ismail A Muse

Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); B82Y 10/00 (2011.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); H01L 29/40 (2006.01); H01L 21/3105 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); B82Y 10/00 (2013.01); H01L 21/0262 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/6656 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 21/31053 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 27/088 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01);
Abstract

Semiconductor devices are provided. A semiconductor device includes a substrate and a gate structure on the substrate. The semiconductor device includes a channel on the substrate. The semiconductor device includes a source/drain layer on the channel. Moreover, the semiconductor device includes a spacer on a sidewall of the gate structure. The spacer includes a central portion overlapping the channel in a vertical direction, and a protrusion portion protruding from the central portion. Related methods of manufacturing semiconductor devices are also provided.

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