The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2023
Filed:
Aug. 05, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2005.12); H01L 29/786 (2005.12); H01L 29/423 (2005.12); H01L 29/417 (2005.12); H01L 29/06 (2005.12); H01L 29/78 (2005.12); H01L 29/45 (2005.12); H01L 21/308 (2005.12); H01L 29/775 (2005.12); B82Y 10/00 (2010.12); H01L 27/11 (2005.12); H01L 29/165 (2005.12);
U.S. Cl.
CPC ...
H01L 29/6656 (2012.12); B82Y 10/00 (2012.12); H01L 21/308 (2012.12); H01L 29/0673 (2012.12); H01L 29/41791 (2012.12); H01L 29/42392 (2012.12); H01L 29/45 (2012.12); H01L 29/66439 (2012.12); H01L 29/66795 (2012.12); H01L 29/775 (2012.12); H01L 29/785 (2012.12); H01L 29/7848 (2012.12); H01L 29/78696 (2012.12); H01L 27/1104 (2012.12); H01L 29/165 (2012.12);
Abstract
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.