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For the Inventor, By the Inventor

Dresden, Germany

Dominic Thurmer

This inventor holds 8 USPTO granted patents and 1 published patent application. Top assignee: Globalfoundries Inc.. Active years: 2014-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dominic Thurmer. Retrieved from https://idiyas.com/inventor/dominic-thurmer

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 37.5

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:

goldMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2014-2017

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8 patents (USPTO):Explore Patents
1. 9761689 - Method of forming a semiconductor device and according semiconductor device (2017-09-12),
2. 9646838 - Method of forming a semiconductor structure including silicided and non-silicided circuit elements (2017-05-09),
3. 9368513 - Highly conformal extension doping in advanced multi-gate devices (2016-06-14),
4. 9209274 - Highly conformal extension doping in advanced multi-gate devices (2015-12-08),
5. 9184260 - Methods for fabricating integrated circuits with robust gate electrode structure protection (2015-11-10),
6. 9177874 - Method of forming a semiconductor device employing an optical planarization layer (2015-11-03),
7. 9034746 - Gate silicidation (2015-05-19),
8. 8906794 - Gate silicidation (2014-12-09),

Title: Dominic Thurmer: Innovator in Semiconductor Technology

Introduction

Dominic Thurmer is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on innovative methods for forming semiconductor devices and structures.

Latest Patents

Thurmer's latest patents include a method of forming a semiconductor device that aims to improve the shaping of gate structures. This method avoids spacer removal after silicide formation and suppresses silicide overhang. Additionally, he has developed a method for forming a semiconductor structure that includes both silicided and non-silicided circuit elements. This method involves creating a dielectric layer with intrinsic stress and performing a series of annealing processes to facilitate chemical reactions between materials.

Career Highlights

Dominic Thurmer is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. His expertise in semiconductor devices has positioned him as a key player in the industry, contributing to advancements that enhance device performance and reliability.

Collaborations

Thurmer has collaborated with notable colleagues such as Joachim Patzer and Ardechir Pakfar. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Dominic Thurmer's work in semiconductor technology exemplifies the spirit of innovation. His contributions continue to shape the future of the industry, making him a significant figure in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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