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For the Inventor, By the Inventor

Boise, ID, United States of America

Dimitrios Pavlopoulos

USPTO Granted Patents = 16

Average Co-Inventor Count = 4.5

ph-index = 4

Forward Citations = 78(Granted Patents)


Location History:

  • Glendale, CA (US) (2019 - 2022)
  • Boise, ID (US) (2017 - 2023)

Company Filing History:

goldMedal16 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2017-2023

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16 patents (USPTO):
1. 11621270 - Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (2023-04-04),
2. 11404571 - Methods of forming NAND memory arrays (2022-08-02),
3. 11329062 - Memory arrays and methods used in forming a memory array (2022-05-10),
4. 11309321 - Integrated structures containing vertically-stacked memory cells (2022-04-19),
5. 11094705 - Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (2021-08-17),
6. 10892268 - Integrated structures containing vertically-stacked memory cells (2021-01-12),
7. 10854747 - NAND memory arrays, devices comprising semiconductor channel material and nitrogen, and methods of forming NAND memory arrays (2020-12-01),
8. 10658382 - Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor (2020-05-19),
9. 10586807 - Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks (2020-03-10),
10. 10446681 - NAND memory arrays, and devices comprising semiconductor channel material and nitrogen (2019-10-15),
11. 10388665 - Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack (2019-08-20),
12. 10381367 - Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (2019-08-13),
13. 10381365 - Integrated structures containing vertically-stacked memory cells (2019-08-13),
14. 10283520 - Elevationally-extending string of memory cells individually comprising a programmable charge storage transistor and method of forming an elevationally-extending string of memory cells individually comprising a programmable charge storage transistor (2019-05-07),
15. 10014311 - Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon (2018-07-03),

Title: Inventor Spotlight: Dimitrios Pavlopoulos

Introduction:

Dimitrios Pavlopoulos is a prolific inventor based in Boise, Idaho, with a remarkable portfolio of 16 patents to his name. His innovative work in memory cell technologies and polysilicon formation has significantly contributed to the field of semiconductor manufacturing.

Latest Patents:

Pavlopoulos' latest patents showcase his expertise in cutting-edge technologies. These include methods for forming an array of elevationally-extending strings of memory cells, with a focus on programmable charge storage transistors and electronic components comprising polysilicon. These inventions involve the precise manipulation of elemental carbon and nitrogen to enhance the performance and efficiency of memory arrays.

Career Highlights:

Currently affiliated with Micron Technology Incorporated, Pavlopoulos continues to push the boundaries of semiconductor design and fabrication. His contributions have played a pivotal role in advancing the capabilities of NAND memory arrays, demonstrating a deep understanding of channel materials, charge-storage mechanisms, and dielectric properties.

Collaborations:

Within the dynamic environment of Micron Technology Incorporated, Pavlopoulos collaborates with talented colleagues such as Anish A Khandekar and Kunal Shrotri. Together, they form a formidable team dedicated to exploring new frontiers in semiconductor technologies and fostering innovation within the industry.

Conclusion:

In conclusion, Dimitrios Pavlopoulos stands out as a visionary inventor whose groundbreaking work in memory cell technologies and polysilicon formation continues to shape the future of semiconductor manufacturing. With a keen eye for detail and a passion for innovation, Pavlopoulos exemplifies the spirit of creativity and ingenuity that drives progress in the field of electronics.

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