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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094705 B1

PDFFull Text
Date of Patent:
Aug. 17, 2021

Filed:

Jul. 22, 2019

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Dimitrios Pavlopoulos, Boise, ID (US);

Kunal Shrotri, Boise, ID (US);

Anish A. Khandekar, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 29/04 (2006.01); H01L 27/1157 (2017.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 27/11521 (2017.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01);
Abstract

A method of forming polysilicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent. A second polysilicon-comprising material is formed over the first polysilicon-comprising material. The second polysilicon-comprising material comprises less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material. Other aspects and embodiments, including structure independent of method of manufacture, are disclosed.

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