This inventor holds 18 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2018-2025.
Location History:
- Hwaseong-si, KR (2018 - 2024)
- Suwon-si, KR (2023 - 2024)
Company Filing History:
Years Active: 2018-2025
Title: The Innovative Contributions of Deok Han Bae
Introduction
Deok Han Bae is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.
Latest Patents
Among his latest patents, one describes a semiconductor device that includes a field insulating layer. This layer surrounds at least a part of the side walls of each of the first and second active patterns on a substrate. The field insulating layer features a protrusion that extends upwardly in a vertical direction between the first and second active patterns. Another notable patent involves a semiconductor device that comprises an active pattern extending in a first direction on a substrate. This device includes a gate structure on the active pattern, with a gate electrode extending in a second direction that intersects the active pattern. Additionally, it features a gate capping pattern that includes a gate capping liner defining a gate capping recess.
Career Highlights
Deok Han Bae is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His extensive experience and expertise have positioned him as a key figure in his field.
Collaborations
Throughout his career, Deok Han Bae has collaborated with notable colleagues, including Myung Yoon Um and Ju Hun Park. These collaborations have further enhanced the impact of his work in the semiconductor industry.
Conclusion
Deok Han Bae's contributions to semiconductor technology are noteworthy and reflect his dedication to innovation. His patents and collaborations demonstrate his significant role in advancing this critical field.