The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Feb. 25, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
In Yeal Lee, Seongnam-si, KR;
Yoon Young Jung, Suwon-si, KR;
Jin-Wook Kim, Hwaseong-si, KR;
Deok Han Bae, Suwon-si, KR;
Myung Yoon Um, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.