The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
May. 08, 2024
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); H10D 30/6219 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/118 (2025.01); H10D 84/853 (2025.01); H10D 30/6211 (2025.01); H10D 30/67 (2025.01);
Abstract
A semiconductor device including a field insulating layer, which surrounds at least a part of side walls of each of first and second active patterns on a substrate, the field insulating layer including a protrusion protruding upwardly in a vertical direction between the first active pattern and second active pattern, respectively.