The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Mar. 26, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Deok Han Bae, Hwaseong-si, KR;
Jin Wook Kim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 21/823456 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/4238 (2013.01); H01L 29/42364 (2013.01); H01L 29/4983 (2013.01); H01L 29/513 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 21/823431 (2013.01);
Abstract
A semiconductor device includes a substrate having an active region, a gate structure on the active region, the gate structure including a gate dielectric layer and a gate electrode layer, and the gate electrode layer having a rounded upper corner, and gate spacer layers on side surfaces of the gate structure, the gate spacer layers having an upper surface at a lower height level than an upper surface of the gate electrode layer.