Denis Pellissier-Tanon

Title: The Innovations of Denis Pellissier-Tanon

Introduction

Denis Pellissier-Tanon is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of photodiodes. With a total of five patents to his name, Pellissier-Tanon continues to push the boundaries of innovation in his field.

Latest Patents

Among his latest patents is the Germanium photodiode, which features an active area formed by intrinsic germanium. This active area is strategically located within a cavity formed in a silicon layer, defined by opposed side walls angled relative to a direction perpendicular to the bottom surface of the silicon layer. This design supports the epitaxial growth of intrinsic germanium with minimal lattice defects. Another significant patent is the Vertical photodiode, which includes an active area with contacting pads for the diode terminals laterally shifted away from the active area. This innovative design ensures that the pads are not located directly above or below the active area, enhancing the photodiode's functionality.

Career Highlights

Denis Pellissier-Tanon has worked with prominent companies in the semiconductor industry, including STMicroelectronics. His experience at STMicroelectronics has allowed him to collaborate on various cutting-edge projects, further solidifying his reputation as an expert in his field.

Collaborations

Throughout his career, Pellissier-Tanon has collaborated with talented individuals such as Charles Baudot and Sebastien Cremer. These collaborations have contributed to the advancement of technology in the semiconductor sector.

Conclusion

Denis Pellissier-Tanon is a distinguished inventor whose work in photodiodes has made a lasting impact on the semiconductor industry. His innovative patents and collaborations highlight his commitment to advancing technology.