Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Denis Pellissier-Tanon

Charles Baudot

Sébastien Cremer

Nathalie Vulliet

Didier Dutartre

Yves Campidelli

Zahra Aitfqirali-Guerry

A photodiode includes an active area formed by intrinsic germanium. The active area is located within a cavity formed in a silicon layer. The cavity is defined by opposed side walls which are angled relative to a direction perpendicular to a bottom surface of the silicon layer. The angled side walls support epitaxial growth of the intrinsic germanium with minimal lattice defects.

Germanium photodiode

A vertical photodiode includes an active area. The contacting pads for the diode terminals are laterally shifted away from the active area so as to not be located above or below the active area. The active area is formed in a layer of semiconductor material by a lower portion of a germanium area that is intrinsic and an upper portion of the germanium area that is doped with a first conductivity type. The vertical photodiode is optically coupled to a waveguide formed in the layer of semiconductor material.

Vertical photodiode

A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.

Process for producing at least one deep trench isolation

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Grenoble, France

Denis Pellissier-Tanon