The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Oct. 17, 2012
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Didier Dutartre, Meylan, FR;
Zahra Aitfqirali-Guerry, Saint Martin d'Heres, FR;
Yves Campidelli, Le Moutaret, FR;
Denis Pellissier-Tanon, Grenoble, FR;
STMicroelectronics SA, Montrouge, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A method for producing at least one deep trench isolation in a semiconductor substrate including silicon and having a front side may include forming at least one cavity in the semiconductor substrate from the front side. The method may include conformally depositing dopant atoms on walls of the cavity, and forming, in the vicinity of the walls of the cavity, a silicon region doped with the dopant atoms. The method may further include filling the cavity with a filler material to form the at least one deep trench isolation.